The fabrication of thick SiO2 layer by anodization

Optical Materials

Volumn 14, Issue 3, 2000, Pages 271-275

  Ou, Haiyan ^a   Yang, Qinqing ^a   Lei, Hongbing ^a   Wang, Qiming ^a   Hu, Xiongwei ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b Natl Ctr Optoelectron Technol   (China)

Author keywords

Porous silicon; SiO2 Si waveguide device; Thick SiO2 layer

Indexed keywords

EID: 0011845421     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(99)00151-2     Document Type: Article

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