Ge-doped SiO2 thin films produced by helicon activated reactive evaporation

Thin Solid Films

Volumn 419, Issue 1-2, 2002, Pages 82-87

  Li, W T ^a   Bulla, D A P ^a   Charles, C ^a   Boswell, R ^a   Love, J ^a   Luther Davies, B ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Germanium; Hydrogen; Optical properties; Silicon oxide

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON BEAMS; ELLIPSOMETRY; EVAPORATION; OPTICAL WAVEGUIDES; PROFILOMETRY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SILICA; SURFACE ROUGHNESS;

SURFACE PROFILOMETERS;

THIN FILMS;

EID: 0036849795     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00711-3     Document Type: Article

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