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Volumn 43, Issue 3, 2002, Pages 229-252

A relaxation scheme for the hydrodynamic equations for semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; DIFFUSION; HYDRODYNAMICS; RELAXATION PROCESSES;

EID: 0036847398     PISSN: 01689274     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9274(01)00182-9     Document Type: Article
Times cited : (12)

References (39)
  • 1
    • 0034353696 scopus 로고    scopus 로고
    • Global existence and relaxation limit for smooth solutions to the Euler-Poisson model for semiconductors
    • Ali G., Bini D., Rionero S. Global existence and relaxation limit for smooth solutions to the Euler-Poisson model for semiconductors. SIAM J. Appl. Math. 32:2000;572-587.
    • (2000) SIAM J. Appl. Math. , vol.32 , pp. 572-587
    • Ali, G.1    Bini, D.2    Rionero, S.3
  • 2
    • 0035693642 scopus 로고    scopus 로고
    • Approximation of the BTE by a relaxation-time operator: Simulations for a 50 nm-channel Si Diode
    • Anile M., Carrillo J.A., Gamba I.M., Shu C.-W. Approximation of the BTE by a relaxation-time operator: Simulations for a 50 nm-channel Si Diode. VLSI Des. 13:2001;349-354.
    • (2001) VLSI Des. , vol.13 , pp. 349-354
    • Anile, M.1    Carrillo, J.A.2    Gamba, I.M.3    Shu, C.-W.4
  • 3
    • 0034450587 scopus 로고    scopus 로고
    • Extended hydrodynamic model of carrier transport in semiconductors
    • Anile M., Romano V., Russo G. Extended hydrodynamic model of carrier transport in semiconductors. SIAM J. Appl. Math. 61:2000;74-101.
    • (2000) SIAM J. Appl. Math. , vol.61 , pp. 74-101
    • Anile, M.1    Romano, V.2    Russo, G.3
  • 4
    • 0041687749 scopus 로고    scopus 로고
    • Discrete kinetic schemes for multidimensional system of conservation laws
    • Aregba-Driollet D., Natalini R. Discrete kinetic schemes for multidimensional system of conservation laws. SIAM J. Numer. Anal. 37:2000;1973-2004.
    • (2000) SIAM J. Numer. Anal. , vol.37 , pp. 1973-2004
    • Aregba-Driollet, D.1    Natalini, R.2
  • 6
    • 0001452920 scopus 로고
    • An investigation on steady-state velocity overshoot in silicon
    • Baccarani G., Wordeman M. An investigation on steady-state velocity overshoot in silicon. Solid-State Electr. 29:1982;970-977.
    • (1982) Solid-State Electr. , vol.29 , pp. 970-977
    • Baccarani, G.1    Wordeman, M.2
  • 7
    • 0030537690 scopus 로고    scopus 로고
    • On a hierarchy of macroscopic models for semiconductors
    • Ben Abdallah N., Degond P. On a hierarchy of macroscopic models for semiconductors. J. Math. Phys. 37:1996;3308-3333.
    • (1996) J. Math. Phys. , vol.37 , pp. 3308-3333
    • Ben Abdallah, N.1    Degond, P.2
  • 8
    • 0030186891 scopus 로고    scopus 로고
    • An energy-transport model for semiconductors derived from the Boltzmann equation
    • Ben Abdallah N., Degond P., Génieys S. An energy-transport model for semiconductors derived from the Boltzmann equation. J. Statist. Phys. 84:1996;205-231.
    • (1996) J. Statist. Phys. , vol.84 , pp. 205-231
    • Ben Abdallah, N.1    Degond, P.2    Génieys, S.3
  • 9
    • 0014705867 scopus 로고
    • Transport equations for electrons in two-valley semiconductors
    • Bløtekjær K. Transport equations for electrons in two-valley semiconductors. IEEE Trans. Electr. Dev. 17:1970;38-47.
    • (1970) IEEE Trans. Electr. Dev. , vol.17 , pp. 38-47
    • Bløtekjær, K.1
  • 10
    • 0001407297 scopus 로고    scopus 로고
    • Uniformly accurate schemes for hyperbolic systems with relaxation
    • Caflisch R., Jin S., Russo G. Uniformly accurate schemes for hyperbolic systems with relaxation. SIAM J. Numer. Anal. 34:1997;246-281.
    • (1997) SIAM J. Numer. Anal. , vol.34 , pp. 246-281
    • Caflisch, R.1    Jin, S.2    Russo, G.3
  • 13
    • 0029482835 scopus 로고
    • Mixed-RKDG finite element methods for the 2-D hydrodynamic model for semiconductor device simulation
    • Chen Z., Cockburn B., Jerome J., Shu C.-W. Mixed-RKDG finite element methods for the 2-D hydrodynamic model for semiconductor device simulation. VLSI Des. 3:1995;145-158.
    • (1995) VLSI Des. , vol.3 , pp. 145-158
    • Chen, Z.1    Cockburn, B.2    Jerome, J.3    Shu, C.-W.4
  • 14
    • 0034964957 scopus 로고    scopus 로고
    • Numerical discretization of energy-transport models for semiconductors with non-parabolic band structure
    • Degond P., Jüngel A., Pietra P. Numerical discretization of energy-transport models for semiconductors with non-parabolic band structure. SIAM J. Sci. Comput. 22:2000;986-1007.
    • (2000) SIAM J. Sci. Comput. , vol.22 , pp. 986-1007
    • Degond, P.1    Jüngel, A.2    Pietra, P.3
  • 15
    • 4243227379 scopus 로고
    • Monte Carlo study of electron transport in silicon inversion layers
    • Fischetti M., Laux S. Monte Carlo study of electron transport in silicon inversion layers. Phys. Rev. B. 48:1993;2244-2274.
    • (1993) Phys. Rev. B , vol.48 , pp. 2244-2274
    • Fischetti, M.1    Laux, S.2
  • 16
    • 0026105521 scopus 로고
    • Numerical simulation of a steady-state electron shock wave in a submicron semiconductor device
    • Gardner C. Numerical simulation of a steady-state electron shock wave in a submicron semiconductor device. IEEE Trans. Electr. Dev. 38:1991;392-398.
    • (1991) IEEE Trans. Electr. Dev. , vol.38 , pp. 392-398
    • Gardner, C.1
  • 17
    • 0032674952 scopus 로고    scopus 로고
    • The energy-transport and the drift-diffusion equations as relaxation limits of the hydrodynamic model for semiconductors
    • Gasser I., Natalini R. The energy-transport and the drift-diffusion equations as relaxation limits of the hydrodynamic model for semiconductors. Quart. Appl. Math. 57:1999;269-282.
    • (1999) Quart. Appl. Math. , vol.57 , pp. 269-282
    • Gasser, I.1    Natalini, R.2
  • 18
    • 85140869966 scopus 로고    scopus 로고
    • A mixed finite-element discretization of the energy-transport equations for semiconductors
    • in press
    • S. Holst, A. Jüngel, P. Pietra, A mixed finite-element discretization of the energy-transport equations for semiconductors, SIAM J. Sci. Comp., in press.
    • SIAM J. Sci. Comp.
    • Holst, S.1    Jüngel, A.2    Pietra, P.3
  • 19
    • 0000057046 scopus 로고
    • Energy models for one-carrier transport in semiconductor devices
    • Coughran W., Colde J., Lloyd P., White J. (Eds.), Semiconductors, Part II. New York: Springer
    • Jerome J., Shu C.-W. Energy models for one-carrier transport in semiconductor devices. Coughran W., Colde J., Lloyd P., White J., Semiconductors, Part II. IMA Vol. in Math. Appl. 59:1994;185-207 Springer, New York.
    • (1994) IMA Vol. in Math. Appl. , vol.59 , pp. 185-207
    • Jerome, J.1    Shu, C.-W.2
  • 20
    • 0000426129 scopus 로고
    • A streamline-upwinding/Petrov-Galerkin method for the hydrodynamic semiconductor device model
    • Jiang X. A streamline-upwinding/Petrov-Galerkin method for the hydrodynamic semiconductor device model. Math. Models Meth. Appl. Sci. 5:1995;659-681.
    • (1995) Math. Models Meth. Appl. Sci. , vol.5 , pp. 659-681
    • Jiang, X.1
  • 21
    • 0030188150 scopus 로고    scopus 로고
    • The effects of numerical viscosities I: Slowly moving shocks
    • Jin S., Liu J. The effects of numerical viscosities I: slowly moving shocks. J. Comput. Phys. 126:1996;373-389.
    • (1996) J. Comput. Phys. , vol.126 , pp. 373-389
    • Jin, S.1    Liu, J.2
  • 22
    • 84990701264 scopus 로고
    • The relaxation schemes for systems of conservation laws in arbitrary space dimensions
    • Jin S., Xin Z.P. The relaxation schemes for systems of conservation laws in arbitrary space dimensions. Comm. Pure Appl. Math. 48:1995;235-278.
    • (1995) Comm. Pure Appl. Math. , vol.48 , pp. 235-278
    • Jin, S.1    Xin, Z.P.2
  • 23
    • 0034274265 scopus 로고    scopus 로고
    • Relaxation of the isothermal Euler-Poisson system to the drift-diffusion equations
    • Junca S., Rascle M. Relaxation of the isothermal Euler-Poisson system to the drift-diffusion equations. Quart. Appl. Math. 58:2000;511-521.
    • (2000) Quart. Appl. Math. , vol.58 , pp. 511-521
    • Junca, S.1    Rascle, M.2
  • 24
    • 0011294365 scopus 로고    scopus 로고
    • Asymptotic limits in macroscopic plasma models
    • Minneapolis, to appear
    • A. Jüngel, Asymptotic limits in macroscopic plasma models, in: Proceedings of the IMA Workshop, Minneapolis, 2001, to appear.
    • (2001) Proceedings of the IMA Workshop
    • Jüngel, A.1
  • 28
    • 21544449601 scopus 로고
    • Hyperbolic conservation laws with relaxation
    • Liu T.P. Hyperbolic conservation laws with relaxation. Comm. Math. Phys. 108:1987;153-175.
    • (1987) Comm. Math. Phys. , vol.108 , pp. 153-175
    • Liu, T.P.1
  • 30
    • 0003141624 scopus 로고    scopus 로고
    • Recent mathematical results on hyperbolic relaxation problems
    • Freistühler H. (Ed.), Chapman and Hall, London
    • Natalini R. Recent mathematical results on hyperbolic relaxation problems. Freistühler H., Analysis of Systems of Conservation Laws. 1999;128-198 Chapman and Hall, London.
    • (1999) Analysis of Systems of Conservation Laws , pp. 128-198
    • Natalini, R.1
  • 31
    • 0011330750 scopus 로고    scopus 로고
    • Discrete kinetic models for dynamic phase transitions
    • Natalini R., Tang S. Discrete kinetic models for dynamic phase transitions. Comm. Appl. Nonlinear Anal. 7:2000;1-32.
    • (2000) Comm. Appl. Nonlinear Anal. , vol.7 , pp. 1-32
    • Natalini, R.1    Tang, S.2
  • 33
    • 84944483089 scopus 로고
    • Theory of flow of electrons and holes in germanium and other semiconductors
    • van Roosbroeck W. Theory of flow of electrons and holes in germanium and other semiconductors. Bell Syst. Techn. J. 29:1950;560-607.
    • (1950) Bell Syst. Techn. J. , vol.29 , pp. 560-607
    • Van Roosbroeck, W.1
  • 34
    • 0022776857 scopus 로고
    • Multi-dimensional discretization scheme for the hydrodynamic model of semiconductor devices
    • Rudan M., Odeh F. Multi-dimensional discretization scheme for the hydrodynamic model of semiconductor devices. COMPEL. 5:1986;149-183.
    • (1986) COMPEL , vol.5 , pp. 149-183
    • Rudan, M.1    Odeh, F.2
  • 35
    • 84916389355 scopus 로고
    • Large signal analysis of a Silicon Read diode oscillator
    • Scharfetter D., Gummel H. Large signal analysis of a Silicon Read diode oscillator. IEEE Trans. Electr. Dev. ED-16:1969;64-77.
    • (1969) IEEE Trans. Electr. Dev. , vol.ED-16 , pp. 64-77
    • Scharfetter, D.1    Gummel, H.2
  • 37
    • 0011337223 scopus 로고    scopus 로고
    • Essentially non-oscillatory and weighted essentially non-oscillatory schemes for hyperbolic conservation laws
    • NASA Langley Research Center, Hampton, VA
    • C.-W. Shu, Essentially non-oscillatory and weighted essentially non-oscillatory schemes for hyperbolic conservation laws, ICASE Report No. 97-65, NASA Langley Research Center, Hampton, VA, 1997.
    • (1997) ICASE Report , vol.97 , Issue.65
    • Shu, C.-W.1
  • 38
    • 0001568854 scopus 로고
    • Efficient implementation of essentially non-oscillatory shock capturing schemes II
    • Shu C.-W., Osher S. Efficient implementation of essentially non-oscillatory shock capturing schemes II. J. Comput. Phys. 83:1989;32-78.
    • (1989) J. Comput. Phys. , vol.83 , pp. 32-78
    • Shu, C.-W.1    Osher, S.2
  • 39
    • 36149018649 scopus 로고
    • Diffusion of hot and cold electrons in semiconductor barriers
    • Stratton R. Diffusion of hot and cold electrons in semiconductor barriers. Phys. Rev. 126:1962;2002-2014.
    • (1962) Phys. Rev. , vol.126 , pp. 2002-2014
    • Stratton, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.