Energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors

Quarterly of Applied Mathematics

Volumn 57, Issue 2, 1999, Pages 269-282

  Gasser, Ingenuin ^a   Natalini, Roberto ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELDS; HYDRODYNAMICS; PRESSURE; PROBLEM SOLVING; RELAXATION PROCESSES; TEMPERATURE;

DRIFT DIFFUSION EQUATIONS; ENERGY TRANSPORT; HYDRODYNAMIC MODEL; RELAXATION LIMITS;

SEMICONDUCTOR DEVICE MODELS;

EID: 0032674952     PISSN: 0033569X     EISSN: None     Source Type: Journal    
DOI: 10.1090/qam/1686190     Document Type: Article

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