Transient effects in PD SOI NMOSFETs

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 469-473

  Okhonin, S ^a   Nagoga, M ^a   Sallese, J M ^a   Fazan, P ^a   Faynot, O ^b   Pontcharra, J ^b   Cristoloveanu, S ^c  

^a EPFL   (Switzerland)

^b CEA LETI   (France)

^c Grenoble INP Phelma   (France)

Author keywords

Impact ionisation; Partially depleted; SOI MOSFET; Transient effects

Indexed keywords

COMPUTER SIMULATION; IMPACT IONIZATION; PULSE GENERATORS; SILICON ON INSULATOR TECHNOLOGY; TRANSIENTS;

TRANSIENT EFFECTS;

MOSFET DEVICES;

EID: 0035498477     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00645-1     Document Type: Conference Paper

References (4)