Improved electron mobility of AlInSb/InAsSb/AlInSb heterostructures grown lattice-mismatched on GaAs substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 10 PART A, 1998, Pages

  Kudo, Makoto ^a   Mishima, Tomoyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

AlInSb; Electron mobility; InAsSb; Lattice matched; Lattice mismatched; Molecular beam epitaxy

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

ALUMINUM ARSENIDE ANTIMONIUM ALLOYS; ALUMINUM INDIUM ANTIMONIUM ALLOYS; ELECTRON MOBILITY; LATTICE MISMATCH;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032180058     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1132     Document Type: Article

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