Accommodation of excess Ti in a (Ba,Sr)TiO3 thin film with 53.4% Ti grown on Pt/Sio2/Si by metalorganic chemical-vapor deposition

Applied Physics Letters

Volumn 75, Issue 9, 1999, Pages 1299-1301

  Levin, I ^a   Leapman, R D ^b   Kaiser, D L ^a   Van Buskirk, P C ^c   Bilodeau, S ^c   Carl, R ^c  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b NATIONAL INSTITUTES OF HEALTH   (United States)

^c Advanced Technology Materials Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRON DIFFRACTION; ELECTRON ENERGY LOSS SPECTROSCOPY; GRAIN BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICA; SUBSTRATES; THIN FILMS; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON ENERGY LOSS NEAR EDGE STRUCTURES (ELNES); HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM);

SEMICONDUCTING FILMS;

EID: 0032607090     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124674     Document Type: Article

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