Hall measurements of inversion and accumulation-mode 4H-SiC MOSFETs

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1041-1044

  Chatty, K ^a   Banerjee, S ^a   Chow, T P ^a   Gutmann, R J ^a   Arnold, E ^b   Alok, D ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Accumulation; Hall; Interface traps; Inversion

Indexed keywords

ELECTRON MOBILITY; MOSFET DEVICES; SILICON CARBIDE; ANNEALING; CARRIER CONCENTRATION; ELECTRON TRAPS; HALL EFFECT; INTERFACES (MATERIALS); OXIDATION;

ACCUMULATION; ACCUMULATION LAYERS; ACCUMULATION MODES; FIELD-EFFECT MOBILITIES; HALL; HALL MEASUREMENTS; INTERFACE TRAPS; INVERSION; DOPING CONCENTRATIONS;

HALL MOBILITY; MOSFET DEVICES;

EID: 0036434961     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1041     Document Type: Conference Paper

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