Design and implementation of RESURF MOSFETs in 4H-SiC

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 715-718

  Banerjee, S ^a   Chatty, K ^a   Chow, T P ^a   Gutmann, R J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

GATE OXIDE BREAKDOWN; SPECIFIC ON RESISTANCE;

MOSFET DEVICES;

EID: 0035122922     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.715     Document Type: Article

References (6)

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3. K. Chatty, S. Banerjee, T. P. Chow, and R. J. Gutmann, IEEE Electron Device Lett. 21(2000), p. 356.
4. A. K. Agarwal, N. S. Saks, S. S. Mani, V. S. Hegde and P. A. Sanger, Mater. Sci. Forum 338-342(2000), p. 1307.
5. S. Banerjee, K. Chatty, T. P. Chow and R. J. Gutmann, Device Research Conf., Denver, USA, 2000.
6. S. Banerjee, K. Chatty, T. P. Chow and R. J. Gutmann, Electronic Materials Conf., Denver, USA, 2000.