Single-source chemical vapor deposition growth of ZnO thin films using Zn4O(CO2NEt2)6

Chemistry of Materials

Volumn 14, Issue 10, 2002, Pages 4339-4342

  Petrella, A J ^a   Deng, H ^a,b   Roberts, N K ^a   Lamb, R N ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HEXAKIS[MU (DIETHYLCARBAMATO O:O')] MU 4 OXOTETRAZINC; UNCLASSIFIED DRUG; ZINC DERIVATIVE; ZINC OXIDE;

ARTICLE; CHEMICAL PROCEDURES; CHEMICAL STRUCTURE; FILM; MORPHOLOGY; PIEZOELECTRICITY; SCANNING ELECTRON MICROSCOPY; SINGLE SOURCE CHEMICAL VAPOR DEPOSITION; STRESS STRAIN RELATIONSHIP; TEMPERATURE; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0036802408     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm0204324     Document Type: Article

References (33)

1. Maniv, S.; Westwood, W. D.; Columbini, E. J. Vac. Sci. Technol. 1982, 20 (2), 162.
2. Kim, Y. J.; Kim, Y. T.; Yang, H. K.; Park, J. C.; Han, J. I.; Lee, Y. E.; Kim, H. J. J. Vac. Sci. Technol. 1997, A15 (3), 1103.
3. Ryu, Y. R.; Zhu, S.; Wrobel, J. M.; Jeong, H. M.; Miceli, P. F.; White, H. W. J. Cryst. Growth. 2000, 216 (1-4), 326.
4. Yousfi, E. B.; Fouache, J.; Lincot, D. Appl. Surf. Sci. 2000, 153, 223.
5. Mane, R. S.; Lokhande, C. D. Mater. Chem. Phys. 2000, 65, 1.
6. Lau, C. K.; Tiku, S. K.; Lakin, K. M. J. Electrochem. Soc. 1980, 127 (8), 1843.
7. Ghandhi, S. K.; Field, R. J.; Shealy, J. R. Appl. Phys. Lett. 1980, 37 (5), 449.
8. Wenas, W. W.; Yamada, A.; Konagai, M.; Takahashi, K. Jpn. J. Appl. Phys. 1991, 30 (3B), L441-L443.
9. Hahn, B.; Heindel, G.; Pschorr-Schoberer, E.; Gebhardt, W. Semicond. Sci. Technol. 1998, 13, 788.
10. Kaufmann, T.; Funchs, G.; Webert, M.; Frieske, S.; Gaeckle, M. Cryst. Res. Technol. 1989, 24 (3), 269.
11. Smith, F. T. J. Appl. Phys. Lett. 1983, 43 (12), 1108.
12. Gorla, C. R.; Emanetoglu, N. W.; Liang, S.; Mayo, W. E.; Lu, Y. J. Appl. Phys. 1999, 85 (5), 2595.
13. Veith, M. Mater. Sci. Forum 2000, 343-346, 531.
14. Gleizes, A. N. Chem. Vap. Deposition 2000, 6, 155.
15. Bochmann, M. Chem. Vap. Deposition 1996, 2 (3), 85.
16. Senzaki, Y.; Gladfelter, W. L. Polyhedron 1994, 13 (8), 1159.
17. Takahashi, Y.; Yuki, R.; Sugiura, M.; Motojima, S.; Sugiyama, K. J. Cryst. Growth 1980, 50, 491.
18. Byrom, C.; Malik, M. A.; O'Brien, P.; White, A. J. P.; Williams, D. J. Polyhedron 2000, 19, 211.
19. Evans, M. A. H.; Williams, J. O. Thin Solid Films 1982, 87, L1-L2.
20. Frigo, D. M.; Khan, O. F. Z.; O'Brien, P. J. Cryst. Growth 1989, 96, 989.
21. Hursthouse, M. B.; Malik, M. A.; Motevalli, M.; O'Brien, P. Organometallics 1991, 10, 730.
22. Malik, M. A.; Saeed, T.; O'Brien, P. Polyhedron 1993, 12 (12), 1533.
23. Malik, M. A.; O'Brien, P. Chem. Mater. 1991, 3, 999.
24. Hursthouse, M. B.; Malik, M. A.; O'Brien, P. J. Mater. Chem. 1992, 2 (9), 949.
25. Belforte, A.; Calderazzo, F.; Englert U.; Stahle, J. Inorg. Chem. 1991, 30, 3778-3781.
26. Muensitand, S.; Guy, I. L. Appl. Phys. Lett. 1998, 72, 1896.
27. Puchert, M. Ph.D. Thesis, UNSW, Sydney, Australia, 1996.
28. Hiltunen, L.; Leskela, M.; Makela, M.; Niinisto, L. Acta Chem. Scand. 1987, A41, 548.
29. Marr, G. L.; Timbrell, P. Y.; Lamb, R. N. Chem. Mater. 1995, 7 (10), 1890.
30. Fujimura, N.; Nishihara, T.; Goto, S.; Xu, J.; Ito, T. J. Cryst. Growth 1993, 130, 269.
31. Hellwege, K. H.; Hellwege, A. M. Numerical Data and Functional Relationships in Science and Technology; Springer-Verlag: Berlin, 1964; group III, Vol. 2, p 58.
32. Hoffman, R. W. Physics of Non Metallic Thin Films; Plenum: New York, 1976; p 273.
33. Puchert, M. K.; Timbrell, P. Y.; Lamb, R. N. J. Vac. Sci. Technol. A 1996, 14, 2220