Effects of damage build-up in range profiles in crystalline Si; Molecular dynamics simulations

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 195, Issue 3-4, 2002, Pages 269-280

  Peltola, J ^a   Nordlund, K ^a   Keinonen, J ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

Author keywords

Damage; Ion implantation; Range profile; Semiconductors

Indexed keywords

AMORPHIZATION; APPROXIMATION THEORY; COMPUTATIONAL METHODS; COMPUTER SIMULATION; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ION IMPLANTATION; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; PARAMETER ESTIMATION; PROBABILITY;

BINARY COLLISIONS;

SEMICONDUCTING SILICON;

EID: 0036798603     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01124-2     Document Type: Article

References (38)

1. Watkins G.D. Diaz de la Rubia T., Coffa S., Stolk P.A., Rafferty C.S. Defects and Diffusion in Silicon Processing. MRS Symposium Proceedings. Vol. 469:1997;139 Materials Research Society, Pittsburgh.
2. Ziegler J.F., Biersack J.P., Littmark U. The Stopping and Range of Ions in Matter. 1985;Pergamon, New York.
3. Hautala M. Phys. Rev. B. 30:1984;5010.
4. Robinson M.T., Torrens I.M. Phys. Rev. B. 9:1974;5008.
5. Yang Q., Li T., King B.V., MacDonald R.J. Phys. Rev. B. 53:1996;3032.
6. Klein K.M., Park C., Tasch A.F. IEEE Trans. Electron Dev. 39:1992;1614.
7. Hobler G., Betz G. Nucl. Instr. and Meth. B. 180:2001;203.
8. Nordlund K. Comput. Mater. Sci. 3:1995;448.
9. Beardmore K.M., Grønbech-Jensen N. Phys. Rev. E. 57:1998;s7278.
10. Sillanpää J., Nordlund K., Keinonen J. Phys. Rev. B. 62:2000;3109.
11. Allen M.P., Tildesley D.J. Computer Simulation of Liquids. 1989;Oxford University Press, Oxford, England.
12. Jones R.O., Gunnarsson O. Rev. Mod. Phys. 61:1989;689.
13. Keinonen J.et al. Nucl. Instr. and Meth. B. 88:1994;382.
14. Delley J. J. Chem. Phys. 92:1990;508.
15. Nordlund K., Runeberg N., Sundholm D. Nucl. Instr. and Meth. B. 132:1997;45.
16. Puska M.J., Nieminen R.M. Phys. Rev. B. 27:1983;6121.
17. Echenique P.M., Nieminen R.M., Ritchie R.H. Solid State Commun. 37:1981;779.
18. Echenique P.M., Nieminen R.M., Ashley J.C., Ritchie R.H. Phys. Rev. A. 33:1986;897.
19. J. Finneman, Dissertation, The Institute of Physics, Aarhus, 1968, unpublished
20. Ferrell T.L., Richie R.H. Phys. Rev. B. 16:1977;115.
21. Sillanpää J.et al. Phys. Rev. B. 63:2000;134113.
22. Cai D., Grønbech-Jensen N., Snell C.M., Beardmore K.M. Phys. Rev. B. 54:1996;17147.
23. J. Nord, K. Nordlund, J. Keinonen, Phys. Rev. B 65 (2002) 165329.
24. Tersoff J. Phys. Rev. B. 38:1988;9902.
25. Chen Y., Obradovic B., Morris M.et al. J. Techn. Comput. Aided Design. 1999.
26. Dearnaley G., Freeman J.H., Gard G.A., Wilkins M.A. Can. J. Phys. 46:1967;587.
27. Sigmund P. Phys. Rev. 184:1969;383.
28. Nastasi M., Mayer J., Hirvonen J. Ion-Solid Interactions - Fundamentals and Applications. 1996;Cambridge University Press, Cambridge, Great Britain.
29. Urbassek M., Sigmund P. Appl. Phys. A. 35:1984;19.
30. Chakarova R., Pazsit I. Nucl. Instr. and Meth. B. 164:2000;460.
31. Ehrhart P., Zillgen H. Diaz de la Rubia T., Coffa S., Stolk P.A., Rafferty C.S. Defects and Diffusion in Silicon Processing. MRS Symposium Proceedings. Vol. 469:1997;175 Materials Research Society, Pittsburgh.
32. Zillgen H., Ehrhart P. Nucl. Instr. and Meth. B. 127-128:1996;27.
33. Kyuno K.et al. Phys. Rev. Lett. 83:1999;4788.
34. Partyka P.et al. Phys. Rev. B. 64:2001;235207.
35. Jaraiz M., Gilmer G.H., Poate J.M., Diaz de la Rubia T. Appl. Phys. Lett. 68:1996;409.
36. Heinisch H.L., Singh B.N., Diaz de la Rubia T. J. Nucl. Mater. 212-215:1994;127.
37. Hernandez-Mangas J.M.et al. Nucl. Instr. and Meth. B. 174:2001;433.
38. Klein K.M., Park C., Tasch A.F. Nucl. Instr. and Meth. B. 59/60:1991;60.