Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl-gallium and AsH3

Journal of Crystal Growth

Volumn 244, Issue 3-4, 2002, Pages 236-242

  Nishizawa, Jun Ichi ^a   Kurabayashi, Toru ^a   Płotka, Piotr ^a   Kikuchi, Hideyuki ^a   Hamano, Tomoyuki ^a  

^a SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

A1. Adsorption; A1. Doping; A1. Surface processes; A3. Atomic layer epitaxy; A3. Low pressure metalorganic vapor phase epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

ADSORPTION; CARRIER CONCENTRATION; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SURFACE PHENOMENA; THERMAL EFFECTS;

ATOMIC LAYER EPITAXY;

MONOLAYERS;

EID: 0036785880     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01663-9     Document Type: Article

References (16)

1. Pessa M., Jylhä O., Herman M.A. J. Crystal Growth. 67:1984;255.
2. Nishizawa J., Abe H., Kurabayashi T. J. Electrochem. Soc. 132:1985;1197.
3. Usui A., Sunakawa H. Jpn. J. Appl. Phys. 25:1986;L212.
4. Tischler M.A., Bedair S.M. Appl. Phys. Lett. 48:1986;1681.
5. Doi D., Aoyagi Y., Namba S. Appl. Phys. Lett. 48:1986;1787.
6. Ozeki M., Mochizuki K., Ohtsuka N., Kodama K. Appl. Phys. Lett. 53:1988;1509.
7. Nishizawa J., Kurabayashi T. J. Vac. Sci. Technol. B. 13:1995;1024.
8. Nishizawa J., Sakuraba H., Kurabayashi T. J. Vac. Sci. Technol. B. 14:1996;136.
9. Nishizawa J., Sakuraba H., Kurabayashi T. Appl. Surf. Sci. 92:1996;89.
10. Nishizawa J., Kurabayashi T., Abe H., Sakurai N. J. Electrochem. Soc. 134:1987;945.
11. Kobayashi N., Makimoto T. Appl. Surf. Sci. 82/83:1994;284.
12. Kurabayashi T., Kono K., Kikuchi H., Nishizawa J., Esashi M. J. Crystal Growth. 229:2001;152.
13. Nishizawa J., Abe H., Kurabayashi T. J. Electrochem. Soc. 136:1989;478.
14. Kurabayashi T., Kikuchi H., Hamano T., Nishizawa J. J. Crystal Growth. 229:2001;147.
15. Oyama Y., Nishizawa J., Seo K., Suto K. J. Crystal Growth. 212:2000;402.
16. Sasaki M., Yoshida S. Jpn. J. Appl. Phys. 34:1995;1113.