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Applied Surface Science

Volumn 92, Issue , 1996, Pages 89-98

Surface reaction mechanism in MOCVD

(3) Nishizawa, Jun Ichi a,b Sakuraba, Hiroshi a Kurabayashi, Toru a

a TOHOKU UNIVERSITY (Japan)

b SEMICONDUCTOR RESEARCH INSTITUTE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CHEMICAL REACTIONS; EPITAXIAL GROWTH; HYDRIDES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METHANE; MONOLAYERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPY; TEMPERATURE;

ARSENIDE; GROWTH RATE MEASUREMENT; MOLECULAR LAYER EPITAXY; OPTICAL REFLECTION INTENSITY MEASUREMENT; QUADRUPOLE MASS SPECTROSCOPY; SURFACE REACTION MECHANISM; TRIMETHYLGALLIUM;

SURFACE PHENOMENA;

EID: 0030562411 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(95)00209-X Document Type: Article

Times cited : (2)

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