Doping method for GaAs molecular-layer epitaxy by adsorption control of impurity precursor

Journal of Crystal Growth

Volumn 229, Issue 1, 2001, Pages 147-151

  Kurabayashi, T ^a,b   Kikuchi, H ^a   Hamano, T ^a   Nishizawa, J ^a,b  

^a Telecommunications Advancement Organization of Japan   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

A1. Adsorption; A1. Doping; A1. Surface processes; A3. Atomic layer epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

ADSORPTION; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

MOLECULAR LAYER EPITXY (MLE);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035399224     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01125-3     Document Type: Article

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