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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1184-1187

Fraction of interstitialcy component of phosphorus and antimony diffusion in silicon

(6) Shimizu, Takashi a Takagi, Toshio a Matsumoto, Satoru a Sato, Yoshiyuki b Arai, Eisuke c Abe, Takao d

a KEIO UNIVERSITY (Japan)

b NTT CORPORATION (Japan)

c NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

d SHIN ETSU CHEMICAL CO LTD (Japan)

Author keywords

Antimony diffusion in silicon; Enhanced diffusion; Fractional interstitialcy component; Phosphorus diffusion in silicon; Retarded diffusion; Stress of Si3N4 film; Vacancy supersaturation

Indexed keywords

EID: 0001594313 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.1184 Document Type: Article

Times cited : (6)

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