Unique diffusion of phosphorus in silicon based on the pair diffusion model

Defect and Diffusion Forum

Volumn 143-147, Issue , 1997, Pages 999-1002

  Yoshida, M ^a   Arai, E ^b  

^a Yoshida Semiconductor Laboratory   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Pair diffusion model; Phosphorus; Self interstitial; Silicon; Vacancy

Indexed keywords

PHOSPHORUS; SILICON; VACANCIES;

PAIR DIFFUSION MODELS; PHOSPHORUS DIFFUSION; SELF-INTERSTITIAL; SILICON-BASED; SPECIMEN SURFACES;

DIFFUSION;

EID: 4243732541     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/DDF.143-147.999     Document Type: Article

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