Bulk boundary condition for numerical solution of simultaneous diffusion equations of phosphorus and point defects in silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1, 1999, Pages 36-37

  Yoshida, Masayuki ^a   Takahashi, Manabu ^b   Tomokage, Hajime ^c  

^a Yoshida Semiconductor Laboratory   (Japan)

^b FUKUOKA INSTITUTE OF TECHNOLOGY   (Japan)

^c FUKUOKA UNIVERSITY   (Japan)

Author keywords

Boundary condition at x = ; Erfc method for boundary condition; Pair diffusion model; Zero concentration gradient condition

Indexed keywords

BOUNDARY CONDITIONS; MATHEMATICAL MODELS; NUMERICAL METHODS; PHOSPHORUS; POINT DEFECTS; SEMICONDUCTING SILICON;

DIFFUSION EQUATIONS; PAIR DIFFUSION MODEL; ZERO CONCENTRATION GRADIENT CONDITION;

DIFFUSION IN SOLIDS;

EID: 0032687073     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.36     Document Type: Article

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