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Volumn 80, Issue 11, 2002, Pages 1969-1971

Tunneling magnetoresistance in fully epitaxial MnAs/AlAs/MnAs ferromagnetic tunnel junctions grown on vicinal GaAs(111)B substrates

(2) Sugahara, Satoshi a Tanaka, Masaaki b

a UNIVERSITY OF TOKYO (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC TUNNEL JUNCTION; GAAS; MAGNETIC TUNNEL JUNCTION; MN ATOMS; MONOCRYSTALLINE; ROOM TEMPERATURE; TRILAYERS; TUNNEL BARRIER; TUNNELING MAGNETORESISTANCE;

ELECTRIC RESISTANCE; EPITAXIAL GROWTH; GALLIUM ARSENIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETIC DEVICES; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANESE; MANGANESE COMPOUNDS; SEMICONDUCTING GALLIUM; SURFACE SEGREGATION; TRANSMISSION ELECTRON MICROSCOPY;

TUNNEL JUNCTIONS;

EID: 79956055774 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1461425 Document Type: Article

Times cited : (64)

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