Intrinsic exchange biasing in MnAs epilayers grown on (001) GaAs

Applied Physics Letters

Volumn 78, Issue 17, 2001, Pages 2530-2532

  Chun, S H ^a   Potashnik, S J ^a   Ku, K C ^a   Berry, J J ^a   Schiffer, P ^a   Samarth, N ^a  

^a The Pennsylvania State University   (United States)

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Indexed keywords

EID: 0035938315     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1367306     Document Type: Article

References (13)

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11. We note that interdiffusion at the interface does not provide a likely explanation for these observations. High-resolution transmission electron microscopy (HRTEM) studies of MnAs/GaAs epilayers similar to those studied here show an abrupt interface; J. S. Speck (private communication), in agreement with earlier HRTEM studies of the MnAs/GaAs interface; e.g., F. Schippan, A. Trampert, L. Daweritz, and K. H. Ploog, J. Vac. Sci. Technol. B 17, 1716 (1999).
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