Control of the Schottky barrier height in epitaxial magnetic MnAs/n-GaAs and MnSb/n-GaAs contacts

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 852-856

  Van Roy, W ^a   Roelfsema, R F B ^b   Liu, Zhiyu ^a   Akinaga, H ^b   Miyanishi, S ^b   Manago, T ^c   Borghs, G ^a   De Boeck, J ^a  

^a IMEC   (Belgium)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c JRCAT   (Japan)

Author keywords

A1. Interfaces; A3. Molecular beam epitaxy; B2. Magnetic materials; B2. Semiconducting gallium arsenide; B3. Schottky diodes

Indexed keywords

INTERFACES (MATERIALS); MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

SCHOTTKY BARRIER HEIGHT;

MAGNETIC MATERIALS;

EID: 0035399383     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00900-9     Document Type: Conference Paper

References (13)