Barrier composition dependence of differential gain and external differential quantum efficiency in 1.3-μm strained-layer multiquantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 32, Issue 1, 1996, Pages 38-42

  Kito, Masahiro ^a,b,c   Otsuka, Nobuyuki ^a,c,d   Ishino, Masato ^a,c,e   Matsui, Yasushi ^a,c,f,g  

^a PANASONIC CORPORATION   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e KYOTO UNIVERSITY   (Japan)

^f OSAKA UNIVERSITY   (Japan)

^g TOHOKU UNIVERSITY

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DISTRIBUTED FEEDBACK LASERS; ELECTRON ENERGY LEVELS; LASER RESONATORS; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; MULTILAYERS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION;

BARRIER COMPOSITION EFFECTS; DIFFERENTIAL GAIN; EXTERNAL DIFFERENTIAL QUANTUM EFFICIENCY; QUANTUM SIZE EFFECT; STRAIN EFFECT; STRAINED LAYER MULTIQUANTUM WELL LASERS;

QUANTUM WELL LASERS;

EID: 0029754902     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.481918     Document Type: Article

References (12)

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