Single-mode operation over a wide temperature range in 1.3 μm InGaAsP/InP distributed feedback lasers

Journal of Lightwave Technology

Volumn 14, Issue 5, 1996, Pages 851-858

  Lu, Hanh ^{a,b,c,d,e,f,g}   Blaauw, Case ^c   Makino, Toshihiko ^a,c  

^a IEEE

^b Lasertron   (United States)

^c NORTEL NETWORKS   (Canada)

^d Saigon University

^e TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^f M System Giken Co   (Japan)

^g UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; OPTIMIZATION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

DETUNING EFFECT; FABRY-PEROT LASERS; INDEX GAIN COUPLING; SIDE MODE SUPPRESSION RATIO; SINGLE MODE OPERATION; THRESHOLD CURRENTS;

DISTRIBUTED FEEDBACK LASERS;

EID: 0030149803     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.495167     Document Type: Article

References (44)

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