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Volumn 515, Issue 2-3, 2002, Pages 296-304

Preparation of a Si(1 1 1):GaSe van der Waals surface termination by selenization of a monolayer Ga on Si(1 1 1)

(9) Fritsche, R a Wisotzki, E a Thissen A a Islam, A B M O a Klein, A a Jaegermann, W a Rudolph, R b Tonti, D b Pettenkofer, C b

a DARMSTADT UNIVERSITY OF TECHNOLOGY (Germany)

b HAHN MEITNER INSTITUT (Germany)

Author keywords

Epitaxy; Low energy electron diffraction (LEED); Photoelectron spectroscopy; Silicon

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; SEMICONDUCTING SILICON; VAN DER WAALS FORCES; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE TERMINATION;

SURFACE STRUCTURE;

EID: 0036721175 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(02)01851-4 Document Type: Article

Times cited : (17)

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