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Volumn 40, Issue 3 B, 2001, Pages 1888-1891

Fabrication of GaAs Quantum Dots on a Bilayer-GaSe Terminated Si(111) Substrate

Author keywords

Bilayer GaSe; Droplet epitaxy; GaAs; GaSe; Quantum dot; Si(111); Surface termination

Indexed keywords

ANNEALING; DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES;

EID: 0035267624     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1888     Document Type: Article
Times cited : (16)

References (22)
  • 3
    • 0004758585 scopus 로고    scopus 로고
    • eds. W. K. Liu and M. B. Santos World Scientific Publishing, Singapore, Chap. 8
    • B. A. Joyce and D. D. Vvedensky: Thin Films: Heteroepitaxial Systems, eds. W. K. Liu and M. B. Santos (World Scientific Publishing, Singapore, 1999) Chap. 8, p. 368.
    • (1999) Thin Films: Heteroepitaxial Systems , pp. 368
    • Joyce, B.A.1    Vvedensky, D.D.2
  • 19
    • 33646962869 scopus 로고    scopus 로고
    • eds. W. K. Liu and M. B. Santos World Scientific Publishing, Singapore
    • J. A. Venables: Thin Films: Heteroepitaxial Systems, eds. W. K. Liu and M. B. Santos (World Scientific Publishing, Singapore, 1999) Chap. 1, p. 1.
    • Thin Films: Heteroepitaxial Systems , vol.1999 , pp. 1
    • Venables, J.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.