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Volumn 40, Issue 3 B, 2001, Pages 1888-1891
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Fabrication of GaAs Quantum Dots on a Bilayer-GaSe Terminated Si(111) Substrate
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Author keywords
Bilayer GaSe; Droplet epitaxy; GaAs; GaSe; Quantum dot; Si(111); Surface termination
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Indexed keywords
ANNEALING;
DEPOSITION;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING SILICON;
SUBSTRATES;
DROPLET EPITAXY;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0035267624
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.40.1888 Document Type: Article |
Times cited : (16)
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References (22)
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