Optimization of the barrier height in 1.3 μm InGaAsP multiple-quantum-well active regions for high temperature operation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4283, Issue , 2001, Pages 227-237

  Mogg, S ^a   Piprek, J ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

InGaAsP InP; Laser characterization; Numerical analysis; Quantum well devices; Semiconductor device modelling; Semiconductor lasers

Indexed keywords

ENERGY GAP; HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; NUMERICAL ANALYSIS; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

FABRY-PEROT LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034773664     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.432569     Document Type: Conference Paper

References (30)

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2. Role of radiative and nonradiative processes on the temperature sensitivity of strained and unstrained 1.5 μm InGaAs(P) quantum well lasers
3. Carrier loss in InGaAsP-InP lasers grown by hydride CVD
4. Simulation and analysis of double-fused 1.55 μm vertical-cavity lasers
5. Analysis of characteristic temperature for InGaAsP BH lasers with p-n-p-n blocking layers using two-dimensional device simulator
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7. 0 in 1.3 μm semiconductor lasers
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9. Effect of barrier height on the uneven carder distribution in asymmetric multiple-quantum-well InGaAsP lasers
10. Carrier non-uniformity effects on the internal efficiency of multi-quantum-well lasers
11. Nonuniform carrier distribution in asymmetric multiple-quantum-well InGaAsP laser structures with different numbers of quantum wells
12. Hole distribution in InGaAsP 1.3 μm multiple quantum well laser structures with different hole confinement energies
13. Temperature sensitivity of 1.54 μm vertical-cavity lasers with an InP-based Bragg reflector
14. Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors
15. Design, growth and performance of different QW structures for improved 1300 nm InGaAsP lasers
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17. Physical models and numerical simulation of modern semiconductor lasers
18. Heterostructure and quantum well physics
19. The problem of heterojunction band discontinuities
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21. Comments on the nature of electron leakage in InGaAsP/InP double heterostructure
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23. Intraband relaxation effect on optical spectra
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