Facet coating effects on 1.3 and 1.55 fxm strained multiple-quantum-well AIGalnAs/lnP laser diodes

IEE Proceedings: Optoelectronics

Volumn 146, Issue 6, 1999, Pages 268-272

  Lin, M C ^a   Wu, W H ^a,b   Wang, ^a,b  

^a CHUNGHWA TELECOM CO LTD   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; THRESHOLD VOLTAGE;

FACET COATING EFFECTS; SLOPE EFFICIENCY DROPS;

INTEGRATED OPTOELECTRONICS;

EID: 0033337299     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:19990839     Document Type: Article

References (15)

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