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Volumn 201, Issue , 1999, Pages 923-926
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High performance phosphorus-free 1.3 μm AlGaInAs/InP MQW lasers
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPOSITION EFFECTS;
HETEROJUNCTIONS;
LEAKAGE CURRENTS;
QUANTUM WELL LASERS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DOPING;
CLADDING LAYERS;
CRYSTAL GROWTH;
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EID: 0032656296
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)01490-0 Document Type: Article |
Times cited : (3)
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References (14)
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