Atomic scale memory at a silicon surface

Nanotechnology

Volumn 13, Issue 4, 2002, Pages 499-502

  Bennewitz, R ^a,b   Crain, J N ^a   Kirakosian, A ^a   Lin, J L ^c   McChesney, J L ^a   Petrovykh, D Y ^a   Himpsel, F J ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b UNIVERSITY OF BASEL   (Switzerland)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL ATOMIC STRUCTURE; DATA STORAGE EQUIPMENT; DEPOSITION; GOLD; HARD DISK STORAGE; RELIABILITY; SCANNING TUNNELING MICROSCOPY; SIGNAL TO NOISE RATIO;

ATOMIC SCALE MEMORY; MAGNETIC HARD DISK; WRITING PROCESS;

SEMICONDUCTING SILICON;

EID: 0036690420     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/13/4/312     Document Type: Article

References (29)