Transient reflecting grating spectroscopy for defect analysis of surface region of semiconductors

Journal of Applied Physics

Volumn 92, Issue 3, 2002, Pages 1367-1371

  Donen, Hiroshi ^a   Katayama, Kenji ^a   Sawada, Tsuguo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL METHOD; ANNEALING TIME; DEFECT ANALYSIS; DEFECT STATE; ION-IMPLANTED SILICON; PHOTOEXCITED CARRIERS; REFLECTING GRATINGS; SURFACE REGION; ULTRA-FAST; ULTRAFAST CARRIER DYNAMICS;

PHYSICAL PROPERTIES; PHYSICS;

SURFACE DEFECTS;

EID: 0036677513     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1492860     Document Type: Article

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