Ultrafast dynamics at a silicon surface detected with femtosecond transient reflecting grating spectroscopy

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1074-1080

  Katayama, K ^a   Sugai, K ^a   Inagaki, Y ^a   Sawada, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; BAND EDGE; CARRIER DYNAMICS; FEMTOSECOND TRANSIENT; FREE-CARRIER DYNAMICS; MAXIMUM TEMPERATURE RISE; NONLINEAR DEPENDENCE; PICOSECONDS; PROBE WAVELENGTH; PUMP INTENSITIES; REFLECTING GRATINGS; SILICON SURFACES; TEMPERATURE RISE; THERMAL COMPONENT; TIME RESOLUTION; ULTRA-FAST DYNAMICS;

PHYSICAL PROPERTIES; PHYSICS;

SEMICONDUCTOR DEVICES;

EID: 0036469611     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1420769     Document Type: Article

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