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Materials Chemistry and Physics

Volumn 54, Issue 1-3, 1998, Pages 67-70

Annealing behavior of defects introduced in SOI structure by arsenic ion implantation (ESR and PAS studies)

(5) Suzuki, Akinori a Nakamura, Hideki a Izumi, Tomio a Onda, Takayuki b Hara, Tohru b

a TOKAI UNIVERSITY (Japan)

b HOSEI UNIVERSITY (Japan)

Author keywords

Amorphous; Electron spin resonance; Polycrystalline; Silicon on insulator

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; ARSENIC; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; ION IMPLANTATION; PARAMAGNETISM; PHOTOACOUSTIC SPECTROSCOPY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICE STRUCTURES;

ARSENIC ION IMPLANTATION; PARAMAGNETIC DEFECTS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032121389 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(98)00017-0 Document Type: Article

Times cited : (6)

References (15)

1
- 4243304418
- R.A.B. Devine, W.L. Warren, M.R. Shaneyfelt, D.M. Fleetwood, B. Aspar, Nucl. Instr. Methods B 84 (1994) 254.
- (1994) Nucl. Instr. Methods B , vol.84 , pp. 254
- Devine, R.A.B.¹ Warren, W.L.² Shaneyfelt, M.R.³ Fleetwood, D.M.⁴ Aspar, B.⁵

2
- 0025660888
- A. Stesmans, R. Devin, A.G. Revesz, H. Hughes, IEEE Tran. Nucl. Sci. 37 (1990) 2008.
- (1990) IEEE Tran. Nucl. Sci. , vol.37 , pp. 2008
- Stesmans, A.¹ Devin, R.² Revesz, A.G.³ Hughes, H.⁴

3
- 0023585937
- R.E. Stahlbush, W.E. Carlos, S.M. Prokes, IEEE Tran. Nucl. Sci. 34 (1987) 1680.
- (1987) IEEE Tran. Nucl. Sci. , vol.34 , pp. 1680
- Stahlbush, R.E.¹ Carlos, W.E.² Prokes, S.M.³

4
- 36549104646
- W.E. Carlos, Appl. Phys. Lett. 50 (1987) 1450.
- (1987) Appl. Phys. Lett. , vol.50 , pp. 1450
- Carlos, W.E.¹

5
- 0001257610
- J.F. Conley Jr., P.M. Lenahan, P. Roitman, Appl. Phys. Lett. 60 (1992) 2889.
- (1992) Appl. Phys. Lett. , vol.60 , pp. 2889
- Conley J.F., Jr.¹ Lenahan, P.M.² Roitman, P.³

6
- 0006270379
- Y. Ishikawa, N. Shibata, Nucl. Instr. Methods B 95 (1995) 491.
- (1995) Nucl. Instr. Methods B , vol.95 , pp. 491
- Ishikawa, Y.¹ Shibata, N.²

7
- 36449000502
- A. Stresmans, A.G. Revesz, H.L. Hughes, J. Appl. Phys. 59 (1991) 175.
- (1991) J. Appl. Phys. , vol.59 , pp. 175
- Stresmans, A.¹ Revesz, A.G.² Hughes, H.L.³

8
- 0041560729
- K. Sakiyama, T. Naka, S. Kaneko, T. Onda, T. Hara, J. Electrochem. Soc. 143 (1996) 167.
- (1996) J. Electrochem. Soc. , vol.143 , pp. 167
- Sakiyama, K.¹ Naka, T.² Kaneko, S.³ Onda, T.⁴ Hara, T.⁵

9
- 0014745847
- B.L. Clowder, R.S. Title, M.H. Brodsky, G.D. Pettit, Appl. Phys. Lett. 16 (1970) 205.
- (1970) Appl. Phys. Lett. , vol.16 , pp. 205
- Clowder, B.L.¹ Title, R.S.² Brodsky, M.H.³ Pettit, G.D.⁴

10
- 4243877743
- R.A. Street, J.C. Knights, D.K. Biegelsen, Phys. Rev. B 18 (1978) 1886.
- (1978) Phys. Rev. B , vol.18 , pp. 1886
- Street, R.A.¹ Knights, J.C.² Biegelsen, D.K.³

11
- 0019622904
- D.L. Griscom, E.J. Friebele, Rad. Eff. 65 (1982) 63.
- (1982) Rad. Eff. , vol.65 , pp. 63
- Griscom, D.L.¹ Friebele, E.J.²

12
- 0009613791
- W. Jackson, N.M. Amer, J. Appl. Phys. 51 (1980) 3343.
- (1980) J. Appl. Phys. , vol.51 , pp. 3343
- Jackson, W.¹ Amer, N.M.²

13
- 0041560735
- H. Yoshinaga, J. Kawai, T. Agui, F. Uehara, T. Matsumori, Nucl. Instr. Methods B 80/81 (1993) 591.
- (1993) Nucl. Instr. Methods B , vol.80-81 , pp. 591
- Yoshinaga, H.¹ Kawai, J.² Agui, T.³ Uehara, F.⁴ Matsumori, T.⁵

14
- 0043063690
- U. Zammit, M. Marinelli, F. Scudieri, S. Martellucci, Appl. Phys. Lett. 50 (1987) 305.
- (1987) Appl. Phys. Lett. , vol.50 , pp. 305
- Zammit, U.¹ Marinelli, M.² Scudieri, F.³ Martellucci, S.⁴

15
- 26744438211
- Y. Wu, A. Steesmans, Phys. Rev. B 38 (1988) 2776.
- (1988) Phys. Rev. B , vol.38 , pp. 2776
- Wu, Y.¹ Steesmans, A.²

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