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Physica Status Solidi (A) Applied Research

Volumn 192, Issue 2, 2002, Pages 360-365

Distribution of horizontal dislocations in ELO-GaN

(6) Horibuchi, K a Nishimoto, S a Sueyoshi, M a Kuwano, N a Miyake, H b Hiramatsu, K b

a KYUSHU UNIVERSITY (Japan)

b MIE UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); FINITE ELEMENT METHOD; GALLIUM NITRIDE; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; MICROSTRUCTURE; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL LATERAL OVERGROWN (ELO) LAYERS; HORIZONTAL DISLOCATIONS (HD);

SEMICONDUCTOR LASERS;

EID: 0036671083 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200208)192:2<360::AID-PSSA360>3.0.CO;2-U Document Type: Conference Paper

Times cited : (5)

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