Delta-doping of Si in GaN by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 A, 1999, Pages 681-682

  Kim, Jong Hee ^a   Yang, Gye Mo ^a   Choi, Sung Chul ^a   Choi, Ji Youn ^a   Cho, Hyun Kyung ^a   Lim, Kee Young ^a   Lee, Hyung Jae ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Capacitance voltage; Delta doping; GaN; Metalorganic chemical vapor deposition; Si

Indexed keywords

EID: 0010212954     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.681     Document Type: Article

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