Void formation during silicidation and its influence on the thermal stability of cobalt silicide

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 20, Issue 4, 2002, Pages 1171-1176

  Kim, Nam Sik ^a   Cha, Han Seob ^a   Sung, Nag Kyun ^a   Ryu, Hyuk Hyun ^a   Youn, Ki Seog ^a   Lee, Won Gyu ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b Kangwon National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CHEMICAL ACTIVATION; DEPOSITION; DOPING (ADDITIVES); GRAIN GROWTH; INTERFACES (MATERIALS); INTERFACIAL ENERGY; OXIDATION; POLYSILICON; THERMODYNAMIC STABILITY;

COBALT SILICIDE; DOPANT; SILICIDATION;

COBALT COMPOUNDS;

EID: 0036648983     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1477199     Document Type: Article

References (13)