A 0.18μm Ti-Salicided p-MOSFET with Shallow Junctions Fabricated by Rapid Thermal Processing in an NH3 Ambient

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 443-446

  Segawa, Mizuki ^a   Yabu, Toshiki ^a   Arai, Masatoshi ^a   Moriwaki, Masaru ^a   Umimoto, Hiroyuki ^a   Sekiguchi, Mitsuru ^a   Kanda, Akihiro ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; BORON; FABRICATION; RAPID THERMAL PROCESSING; SILICIDES; DIFFUSION; INTERFACES (MATERIALS); ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; TITANIUM;

AMBIENTS; BORON IMPLANTATION; BORON IONS; LOWER ENERGIES; NITROGEN ATOM; P-MOSFETS; RAPID-THERMAL PROCESSING; SHALLOW-JUNCTIONS; SHORT-CHANNEL EFFECT; SOURCE/DRAIN REGIONS;

MOSFET DEVICES;

GATE OXIDES; RAPID THERMAL PROCESSING; SHALLOW JUNCTIONS; SILICIDE;

EID: 0030403765     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553622     Document Type: Conference Paper

References (5)

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3. J. A. Kittl, Q.-Z.. Hong, M. Rodder, D. A. Prinslow, and G. R. Misium, "A Ti Salicide Process for 0.10 pm Gate Length CMOS Technology," VLSI Tech. Dig., pp. 14-15,1996.
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5. W. T. Lynch and K. K. Ng, "A Tester for the Contact Resistivityof Self-Aligned Silicides,"Tech. Dig. of IEDM., pp. 352-355,1988.