Thermoelectric properties of Ru- or Ge-doped β-FeSi2 films prepared by electron beam deposition

Thin Solid Films

Volumn 381, Issue 2, 2001, Pages 296-302

  Tsunoda, Tatsuo ^a   Mukaida, Masakazu ^a   Imai, Yoji ^a  

^a NATL INST OF MAT AND CHEM RES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; MORPHOLOGY; RUTHENIUM; SCANNING ELECTRON MICROSCOPY; SEEBECK EFFECT; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTITUTION REACTIONS; X RAY DIFFRACTION ANALYSIS;

ELECTRON BEAM DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0035154838     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01759-4     Document Type: Article

References (9)

1. Birkholz U., Scelm J. Phys. Stat. Solid. 27:1968;413.
2. Kojima T. Phys. Stat. Solid. (a). 111:1989;233.
3. Nishida I. Z. Kagaku. 15:1978;72. and references therein.
4. Takahashi K. Semiconductor Engineering (ISBN 4-627-71040-2). 1987;347 Morikita, Tokyo.
5. Takizawa H., Mo P.F., Endo T., Shimada M. J. Mater. Sci. 30:1995;4199.
6. Tsunoda T., Nukaida M., Watanabe A., Imai Y. J. Mater. Res. 11:(8):1996;2062.
7. Gmelins Handbuch der anorg. Chemie 35 Teil B, Verlag Chemie GmbH, Berlin, 1934, p. 84.
8. Gmelins Handbuch der anorg. 59 Teil AII, Verlag Chemie GmbH, Berlin, 1934, p. 1753.
9. N. Sadatomi, O. Yamashita, private communication.