Study on iron dissilicide (β-FeSi2) epitaxial thin films on Si(111) substrate by mass-analyzed low-energy ion beam epitaxy

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 18, Issue 4, 1997, Pages 264-268

  Li, Hui ^a   Ma, Hui ^a   Ding, Weiqing ^a   Qin, Fuquang ^a  

^a BEIJING NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; ION BEAMS; SEMICONDUCTING SILICON COMPOUNDS;

ION BEAM EPITAXY; LATTICE MISFIT;

SEMICONDUCTING FILMS;

EID: 0031125876     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)