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Volumn 17, Issue 7, 2002, Pages 662-667

High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions

(8) Hastas, N A a Dimitriadis, C A a Panayiotatos, Y a Tassis, D H a Logothetidis, S a Papadimitriou, D b Roupakas, G b Adamopoulos, G b

a ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

b NATIONAL TECHNICAL UNIVERSITY OF ATHENS (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; CARBON; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; MAGNETRON SPUTTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; TEMPERATURE;

BAND-TO-BAND TUNNELING; LOW FREQUENCY NOISE MEASUREMENT; PHOTOCONDUCTANCE MEASUREMENTS;

HETEROJUNCTIONS;

EID: 0036642252 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/7/304 Document Type: Article

Times cited : (12)

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