Hydrogen degradation in InP HEMTs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 231-234

  Blanchard, Roxann R ^a   del Alamo, Jesus A ^a   Chao, P C ^a   Adams, Stephen B ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL LATTICES; GATES (TRANSISTOR); HYDROGEN; PIEZOELECTRICITY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; STOICHIOMETRY; STRESS ANALYSIS; THRESHOLD VOLTAGE; TITANIUM COMPOUNDS;

PIEZOELECTRIC SHIFTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032265921     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)