Simulation of the effects of space charge and Schottky barriers on ferroelectric thin film capacitor using Landau Khalatnikov theory

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 49, Issue 7, 2002, Pages 980-986

  Lo, Veng Cheong ^a,b   Chen, Zhi Jiang ^c  

^a IEEE   (Hong Kong)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^c BEIHANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HYSTERESIS LOOPS;

BOUNDARY CONDITIONS; CAPACITORS; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; ELECTRODES; HYSTERESIS; INTERFACES (MATERIALS); PEROVSKITE; SCHOTTKY BARRIER DIODES; THERMODYNAMICS;

FERROELECTRIC THIN FILMS;

ARTICLE;

EID: 0036628598     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2002.1020168     Document Type: Article

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