Thickness-dependent electrical properties in lanthanum-doped PZT thick films

Materials Research Society Symposium - Proceedings

Volumn 433, Issue , 1996, Pages 325-332

  Chen, H D ^a   Li, K K ^a   Gaskey, C J ^a   Cross, L E ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; INTERFEROMETERS; LANTHANUM; LASER BEAMS; LEAD COMPOUNDS; PIEZOELECTRICITY; RESIDUAL STRESSES; SEMICONDUCTOR DOPING; SILICON; SOL-GELS; SUBSTRATES; THICK FILMS;

DOUBLE BEAM LASER INTERFEROMETER;

CERAMIC MATERIALS;

EID: 0030383905     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-433-325     Document Type: Conference Paper

References (12)