Charge collection studies of SOI diodes

IEEE Transactions on Nuclear Science

Volumn 49 III, Issue 3, 2002, Pages 1372-1376

  Colladant, T ^a,b   Ferlet Cavrois, V ^b   Musseau, O ^b   L'Hoir, A ^a   Campbell, A B ^c   Buchner, S ^d   Knudson, A ^d   McMorrow, D ^c   Fischer, B ^e   Schlogl M ^e   Lewis, D ^f  

^a SORBONNE UNIVERSITÉ   (France)

^b CEA DAM DIF   (France)

^c NAVAL RESEARCH LABORATORY   (United States)

^d SFA INC   (United States)

^e GSI HELMHOLTZZENTRUM FÜR SCHWERIONENFORSCHUNG GMBH   (Germany)

^f UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

Charge collection; Heavy ion; Pulsed laser; SOI

Indexed keywords

HEAVY IONS; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THIN FILMS;

CHARGE COLLECTION; ELECTROMAGNETIC SIMULATION; HEAVY ION MICROBEAM; OPTICAL COUPLING;

ION BOMBARDMENT;

EID: 0036624817     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.1039669     Document Type: Article

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