Comparison of the sensitivity to heavy ions of SRAM in different simox technologies

Proceedings - IEEE International SOI Conference

Volumn , Issue , 1992, Pages 60-61

  Ferlet Cavrois, V ^a   Musseau, O ^a   Leray, J L ^a   Coic Y M ^a   Lecarval, G ^b   Guichard, E ^b  

^a CEA DIF   (France)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84909932231     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.1992.664794     Document Type: Conference Paper

References (6)

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2. J. I. Leray, E. Dupont-Nivet, O. Musseau, Y. M. Coïc, A. Umbert, P. Lalande, L. F. Pere, A. J. Auberton-Hervé, M. Bruel, C. Jaussaud, J. Margail, B. Giffard, R. Truche, F. Martin, "From substrate to VLSI: Investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena". IEEE Trans. Nucl. Sci., NS-35, 6, 1355, (1988).
3. 2) ". IEEE Trans. Nucl. Sci., NS-37, 6, 2013, (1990).
4. O. Musseau, J. Leray, V. Ferlet, A. Umbert, Y. M. Coïc, P. Hesto, "Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions", IEEE Trans. Nucl. Sci., NS-38, 6, 2013, (1991).
5. M. L. Alles, S. E. Kems, L. W. Massengill, J. E. Clark, K. L. Jones, Jr., R. E. Lowther, "Body placement in CMOS/SOI digital circuit for transient radiation environments", IEEE Trans. Nucl. Sci., NS-38, 6, 2013, (1991).
6. T. Chapuis, "Presentation des résultats obtenus lors des deux premières campagnes sur le tandem de l'TPN (Orsay) ", Rapport CNES, RA/DP/QA/CE/90-007, (1990)