Ionization damage on ATLAS-SCT front-end electronics considering low-dose-rate effects

IEEE Transactions on Nuclear Science

Volumn 49 II, Issue 3, 2002, Pages 1106-1111

  Ullán, Miguel ^a,b   Dorfan, David ^a   Dubbs, Tim ^a   Grillo, Alexander A ^a   Spencer, Ned ^a   Seiden, Abraham ^a   Spieler, Helmuth ^c   Gilchriese, Murdock ^c   Lozano, Manuel ^b  

^a UNIVERSITY OF CALIFORNIA SANTA CRUZ   (United States)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Bipolar integrated circuits; Bipolar transistors; Ionisation damage; Low dose rate effects (LDRE); Radiation detectors; Radiation effects

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; DOSIMETRY; HIGH TEMPERATURE EFFECTS; INTEGRATED CIRCUIT TESTING; IONIZING RADIATION; RADIATION DETECTORS;

IONIZATION DAMAGE; LOW-DOSE-RATE EFFECTS;

RADIATION EFFECTS;

EID: 0036624561     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.1039622     Document Type: Article

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