Stacking number dependence of size distribution of vertically stacked InAs/GaAs quantum dots

Journal of Electronic Materials

Volumn 28, Issue 5, 1999, Pages 452-456

  Furukawa, Y ^a   Noda, S ^a   Ishii, M ^a   Wakahara, A ^b   Sasaki, A ^c  

^a KYOTO UNIVERSITY   (Japan)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^c OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; PARTICLE SIZE ANALYSIS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STRAIN;

SIZE DISTRIBUTION; STACKING NUMBER; STRAIN ENERGY DISTRIBUTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032628110     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0095-x     Document Type: Article

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