Single-event sensitivity of a single SRAM cell

IEEE Transactions on Nuclear Science

Volumn 49 III, Issue 3, 2002, Pages 1486-1490

  Darracq, F ^a   Beauchene T ^a   Pouget, V ^a   Lapuyade, H ^a   Lewis, D ^a   Fouillat, P ^a   Touboul, A ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

Laser mapping; SEU; SRAM

Indexed keywords

CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT TESTING; LASER BEAMS; LASER PULSES; PULSED LASER APPLICATIONS; SYNCHRONIZATION;

DEVICE UNDER TEST; LASER MAPPING; READ-ENABLE TRANSISTORS; SINGLE-EVENT UPSET; WRITE-ENABLE TRANSISTORS;

RANDOM ACCESS STORAGE;

EID: 0036624316     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.1039688     Document Type: Article

References (12)

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