Line edge roughness of developed resist with low-dose electron beam exposure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 6 B, 2002, Pages 4150-4156

  Kotera, Masatoshi ^a   Yamada, Takeshi ^a   Ishida, Yoshihisa ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Acid diffusion distribution; Chemically amplified resist; Convolution with Gaussian; Line edge roughness; Post exposure bake

Indexed keywords

ACIDS; COMPUTER SIMULATION; CONVOLUTION; DIFFUSION; EDGE DETECTION; ELECTRON BEAMS; MATHEMATICAL MODELS; SURFACE ROUGHNESS;

PRIMARY ELECTRONS (PE);

PHOTORESISTS;

EID: 0036614063     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.4150     Document Type: Article

References (21)