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Semiconductor Science and Technology

Volumn 17, Issue 6, 2002, Pages

Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs

(7) Lek, Chun Meng a Cho, Byung Jin a Ang, Chew Hoe b Tan, Shyue Seng c Loh, Wei Yip a Zhen, Jia Zheng b Lap, Chan b

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b CHARTERED SEMICONDUCTOR MANUFACTURING LTD (Singapore)

c NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NITRIDING; PLASMA APPLICATIONS; TRANSCONDUCTANCE; ULTRATHIN FILMS;

DECOUPLED PLASMA NITRIDATION; INTERFACE TRAP DENSITY; ULTRA THIN GATE OXIDE;

MOSFET DEVICES;

EID: 0036610895 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/6/101 Document Type: Letter

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.