Quantitative AES depth profiling of a Ge/Si multilayer structure

Surface and Interface Analysis

Volumn 33, Issue 6, 2002, Pages 461-471

  Hofmann, Siegfried ^a,b   Kesler, Valeri ^a  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL MODIFICATION; GERMANIUM; ION BOMBARDMENT; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; OPTIMIZATION; SILICON; SPUTTERING; SURFACE ROUGHNESS; THICKNESS MEASUREMENT;

DEPTH PROFILING; INCIDENCE ANGLE; MIXING ROUGHNESS INFORMATION DEPTH;

INTERFACES (MATERIALS);

EID: 0036610260     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1219     Document Type: Article

References (18)