Study of low-energy atomic mixing by means of auger depth profiling, XTEM and TRIM simulation on Ge/Si multilayer system

Surface and Interface Analysis

Volumn 24, Issue 7, 1996, Pages 476-480

  Barna, A ^a   Menyhard, M ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; COMPUTER SIMULATION; COMPUTER SOFTWARE; INTERFACES (MATERIALS); SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

AUGER DEPTH PROFILING; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); ION ETCHING; LOW ENERGY ATOMIC MIXING; SOFTWARE PACKAGE TRIM;

METALLIC SUPERLATTICES;

EID: 0030196115     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1096-9918(199607)24:7<476::aid-sia138>3.0.co;2-f     Document Type: Article

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